BAS21J,115 datasheet

Маркировка

BAS21J,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BAS21J,115 Capacitance @ Vr, F: 2pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 150nA @ 250V Forward Continuous Current: 250 mA Forward Voltage Drop: 1.1 V ID_COMPONENTS: 1942107 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 3 A Maximum Diode Capacitance: 2 pF Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 150 nA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SC-90, SOD-323F Peak Reverse Voltage: 300 V Product: Switching Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 300V Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 3000 Part # Aliases: BAS21J T/R Other Names: 934060933115::BAS21J T/R::BAS21J T/R
Количество страниц

10 шт.
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57,93 KB